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DMN6068LK3
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
?
?
?
?
?
?
0.5
± 100
V
μA
nA
I D = 250 μ A, V GS = 0V
V DS = 60V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 12)
Forward Transconductance (Notes 12 & 13)
Diode Forward Voltage (Note 12)
Reverse recovery time (Note 13)
Reverse recovery charge (Note 13)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
1.0
?
?
?
?
?
?
19.7
0.98
145
929
3.0
0.068
0.100
?
1.15
?
?
V
?
S
V
ns
nC
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = 12A
V GS = 4.5V, I D = 6A
V DS = 15V, I D = 12A
I S = 12A, V GS = 0V
I S = 12A, di/dt= 100A/μs
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
C iss
?
502
?
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
C oss
C rss
Q g
Q g
?
?
?
?
45.7
27.1
5.55
10.3
?
?
?
?
pF
pF
nC
nC
V DS = 30V, V GS = 0V
f= 1MHz
V GS = 4.5V
V DS = 30V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 14)
Q gs
Q gd
t D(on)
?
?
?
1.6
3.5
3.6
?
?
?
nC
nC
ns
V GS = 10V
I D = 12A
Turn-On Rise Time (Note 14)
Turn-Off Delay Time (Note 14)
Turn-Off Fall Time (Note 14)
t r
t D(off)
t f
?
?
?
10.8
11.9
8.7
?
?
?
ns
ns
ns
V DD = 30V, V GS = 10V
I D = 12A, R G ? 6.0 ?
Notes:
12. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
DMN6068LK3
Document Number DS32057 Rev 4 - 2
4 of 8
www.diodes.com
May 2013
? Diodes Incorporated
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